Low Alkaline Contamination Bilayer Bottom Antireflective Coatings in F_2 Excimer Laser Lithography

H. L. Chen; Y. F. Chuang; C. C. Lee

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Low Alkaline Contamination Bilayer Bottom Antireflective Coatings in F_2 Excimer Laser Lithography

机译：F_2准分子激光平版印刷中的低碱性污染双层底层抗反射涂层

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A bilayer bottom antireflective coating (BARC) structure composed of tetraethoxysilane (TEOS) oxide and silicon nitride film stacks is demonstrated for F_2 excimer laser (157 nm) lithography. The top TEOS oxide film is an NH_3 contaminant-free material that can be used as an NH_3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry. The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2 percent at 157 nm.

机译：由F_2受激准分子激光（157 nm）光刻演示了由四乙氧基硅烷（TEOS）氧化物和氮化硅薄膜叠层组成的双层底部抗反射涂层（BARC）结构。顶部的TEOS氧化膜是可用作NH_3覆盖层的无NH_3污染物的材料。在氧等离子体处理之后，通过热解吸光谱法显示双层结构具有高的热稳定性。通过添加双层BARC结构，可以显着降低测得的摆动效果。这种BARC结构还可以将各种高反射性基材在157 nm处的反射率降低到小于2％。

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《Electrochemical and solid-state letters》 |2002年第9期|共4页
作者
H. L. Chen; Y. F. Chuang; C. C. Lee;
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1. Low Alkaline Contamination Bilayer Bottom Antireflective Coatings in F_2 Excimer Laser Lithography [J] . H. L. Chen, Y. F. Chuang, C. C. Lee Electrochemical and solid-state letters . 2002,第9期

机译：F_2准分子激光平版印刷中的低碱性污染双层底层抗反射涂层
2. Fabry-Perot Type Antireflective Coatings for Binary Mask Applications in ArF and F_2 Excimer Laser Lithographies [J] . H. L. Chen, C. C. Lee, Y. F. Chuang Electrochemical and solid-state letters . 2003,第4期

机译：用于ArF和F_2受激准分子激光光刻中的二元掩模应用的Fabry-Perot型抗反射涂层
3. Hexamethyldisiloxane film as the bottom antireflective coating layer for ArF excimer laser lithography [J] . Hsuen-Li Chen, Lon A. Wang Applied optics . 1999,第22期

机译：六甲基二硅氧烷薄膜作为ArF准分子激光光刻的底部抗反射涂层
4. Reduction of substrate alkaline contamination by utilizing multi-layer bottom antireflective coating structures in ArF lithography [C] . Chen, H.L., Shih, . 2001

机译：通过在ArF光刻中使用多层底部抗反射涂层结构来减少基材碱性污染
5. Precision excimer laser lithography for cylindrical substrates with thick photoresists. [D] . Cole, Robert L. 2004

机译：精密准分子激光光刻技术，用于带有厚光刻胶的圆柱形基板。
6. Efficiency enhancement of non-selenized Cu(InGa)Se2 solar cells employing scalable low-cost antireflective coating [O] . Bao-Tang Jheng, Po-Tsun Liu, Meng-Chyi Wu 2014

机译：采用可扩展的低成本减反射涂层提高非硒化Cu（InGa）Se2太阳能电池的效率
7. New Antireflective Coating Materials Containing a Novel Chromophore for KrF Laser Lithography. [O] . Kwang-Duk Ahn, Dong Keun Han, Jun-Young Kim, 2001

机译：含有用于KRF激光光刻的新型发色团的新型抗反射涂层材料。
8. Wet-Developed Bilayer Resists for 193-nm Excimer Laser Lithography [R] . Kunz, R. R., Horn, M. W., Bianconi, P. A., 1992

机译：湿法开发的双层抗蚀剂，用于193纳米准分子激光光刻

Low Alkaline Contamination Bilayer Bottom Antireflective Coatings in F_2 Excimer Laser Lithography

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