Deposition of High Dielectric Barium-Doped Titanium Silicon Oxide Films on Silicon Using Hexafluorotitanic Acid and Barium Nitrate

Ming-Kwei Lee; Kuan-Wen Tung; Chia-Ming Yu

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Deposition of High Dielectric Barium-Doped Titanium Silicon Oxide Films on Silicon Using Hexafluorotitanic Acid and Barium Nitrate

机译：六氟钛酸和硝酸钡在硅上沉积高介电掺杂钡的钛硅氧化物薄膜

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High-dielectric barium-doped titanium silicon oxide films are prepared on silicon substrates by liquid, phase deposition using hexafluorotitanic acid and barium nitrate as sources at low temperature. The elements of the films are barium, titanium, silicon, fluorine, and oxygen and uniformly distributed in the films examined by secondary-ion mass spectroscopy. The static dielectric constant and refractive index can reach about 35 and 2.01. From current-voltage measurement, the leakage current of the as-deposited film is about 9.18 X 10~(-6) A/cm~2 at the electrical field intensity of 1 MV/cm. From capacitance-voltage measurement, the effective oxide charge is 4.32 X 10~(-6) cm~(-2). These films have high potential for optoelectronic applications.

机译：采用六氟钛酸和硝酸钡作为低温源，通过液相沉积在硅衬底上制备高介电掺杂钡的钛氧化硅膜。膜的元素是钡，钛，硅，氟和氧，并且通过二次离子质谱法均匀地分布在膜中。静态介电常数和折射率可以达到约35和2.01。从电流-电压测量，在1MV / cm的电场强度下，所沉积的膜的泄漏电流为约9.18×10 6（-6）A / cm 2。通过电容电压测量，有效氧化物电荷为4.32 X 10〜（-6）cm〜（-2）。这些薄膜在光电应用中具有很高的潜力。

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《Electrochemical and solid-state letters》 |2004年第11期|共3页
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Ming-Kwei Lee; Kuan-Wen Tung; Chia-Ming Yu;
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1. Deposition of High Dielectric Barium-Doped Titanium Silicon Oxide Films on Silicon Using Hexafluorotitanic Acid and Barium Nitrate [J] . Ming-Kwei Lee, Kuan-Wen Tung, Chia-Ming Yu Electrochemical and solid-state letters . 2004,第11期

机译：六氟钛酸和硝酸钡在硅上沉积高介电掺杂钡的钛硅氧化物薄膜
2. Nitrogen ion energy dependencies of dielectric constants and compositions of barium carbide-barium nitrate mixed films deposited on silicon wafers by an ion beam assisted deposition technique [J] . Katsuhiro Yokota, Yuuki Teramoto, Fumiyoshi Miyashita Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2007,第Apr期

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3. Dielectric Constants on Mixture Thin Films of Barium Carbide and Barium Nitrate Deposited on Silicon Wafers by Barium Carbonate Electron Beam Evaporation Using Nitrogen Molecular and Ion Beams [J] . Katsuhiro Yokota, Yuuki Teramoto Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第12期

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5. Chemistry of silicon-containing compounds and molecular approaches to materials for silicon-based microelectronics. Preparation of metal silyl complexes, studies of reactions between alkylidenes and silanes, and deposition of titanium oxide thin films. [D] . Blanton, Jaime Renee. 2003

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机译：用于非制冷红外（IR）探测器应用的钡钛氧化物（BaTiO3）和钡锶钛氧化物（BaTisrO3）薄膜的材料合成和加工进展

Deposition of High Dielectric Barium-Doped Titanium Silicon Oxide Films on Silicon Using Hexafluorotitanic Acid and Barium Nitrate

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