Ultrasmooth GaN Etched Surfaces Using Photoelectrochemical Wet Etching and an Ultrasonic Treatment

B. S. Shelton; T. G. Zhu; M. M. Wong; H. K. Kwon; C. J. Eiting; D. J. H. Lambert; S. P. Turini; R. D. Dupuis

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Ultrasmooth GaN Etched Surfaces Using Photoelectrochemical Wet Etching and an Ultrasonic Treatment

机译：使用光电化学湿法刻蚀和超声处理的超光滑GaN刻蚀表面

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We have studied the effect of ultrasonic agitation on the surface of n-type gallium nitride (GaN) layers grown on sapphire that were subjected to a selective photoelectrochemical etch. Solutions of various concentrations of KOH were used along with an ultraviolet lamp to oxidize the exposed GaN surface, resulting in an anisotropic etch. Smooth surfaces with root-mean-square (rms) roughness of ～ 4 nm were obtained for a narrow range of etching conditions. It was found that this window could be extended by using etch conditions which produced "whisker" growth. Subsequent ultrasonic agitation was then used to remove these whiskers and obtain smoother surfaces with the best rms roughness values being ～ 0.9 nm.

机译：我们已经研究了超声搅拌对蓝宝石上生长的n型氮化镓（GaN）层表面的影响，该层经过了选择性光电化学蚀刻。将各种浓度的KOH溶液与紫外线灯一起使用，以氧化暴露的GaN表面，从而进行各向异性蚀刻。在狭窄的蚀刻条件范围内，可获得均方根（rms）粗糙度约为4 nm的光滑表面。已经发现，可以通过使用产生“晶须”生长的蚀刻条件来扩展该窗口。然后，随后的超声搅拌用于去除这些晶须，并获得平滑的表面，其最佳均方根粗糙度值为〜0.9 nm。

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《Electrochemical and solid-state letters》 |2000年第2期|共3页
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B. S. Shelton; T. G. Zhu; M. M. Wong; H. K. Kwon; C. J. Eiting; D. J. H. Lambert; S. P. Turini; R. D. Dupuis;
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1. Ultrasmooth GaN Etched Surfaces Using Photoelectrochemical Wet Etching and an Ultrasonic Treatment [J] . B. S. Shelton, T. G. Zhu, M. M. Wong, Electrochemical and solid-state letters . 2000,第2期

机译：使用光电化学湿法刻蚀和超声处理的超光滑GaN刻蚀表面
2. Etch rate and surface morphology control in photoelectrochemical etching of GaN [J] . Yang B, Fay P Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第4期

机译：GaN光电腐蚀中的腐蚀速率和表面形貌控制
3. Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces [J] . Yunju Choi, Yangsoo Kim, Kwang-Soon Ahn, Applied Surface Science . 2014,第octa30期

机译：在n型Ga极性GaN，N极性GaN和湿法蚀刻的N极性GaN表面上形成的Cr / Au接触的热稳定性研究
4. Pre-photolithographic GaAs Surface Treatment for Improved Photoresist Adhesion During Wet Chemical Etching and Improved Wet Etch Profiles [C] . A.J. Grifie, J.B. Clevenger, M.J. Martinez, International conference on compound semiconductor Manufacturing Technology;CS MANTECH . 2011

机译：光刻前的GaAs表面处理可改善湿法化学刻蚀过程中的光刻胶附着力并改善湿法刻蚀曲线
5. Photoelectrochemical wet etching of gallium nitride [D] . Youtsey, Christopher Thomas 1999

机译：氮化镓的光电化学湿法刻蚀
6. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives [O] . Joonghee Ahn, Kyoung-Hwa Jung, Sung-Ae Son, 2015

机译：附加刻蚀和乙醇湿法粘结对一步法自蚀粘合剂牙本质粘结强度的影响
7. Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces　―Revelation of threading dislocations in GaN― [O] . YAMAMOTO Akio, AZUMA Katsuhiko, YASUDA Tomomi, 2000

机译：在光电化学蚀刻的n-GaN表面上形成的树状特征 - GaN中穿透位错的揭示 -

Ultrasmooth GaN Etched Surfaces Using Photoelectrochemical Wet Etching and an Ultrasonic Treatment

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