...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Electrochemical and solid-state letters >Effect of Retaining Ring Slot Design on Slurry Film Thickness during CMP
【24h】

Effect of Retaining Ring Slot Design on Slurry Film Thickness during CMP

机译：固定环槽设计对CMP过程中浆料膜厚度的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with "standard" and "alternative" slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the "alternative" slot design generated, on average, 30% thicker slurry film compared with the ring with the "standard" slot design.
机译：本文研究了在化学机械平面化（CMP）过程中，保持环槽设计对焊盘与晶圆界面内的浆料膜厚度的影响。测试了两个带有“标准”和“替代”槽设计的固定环。在抛光过程中，使用双发射紫外线增强的荧光测量了垫-晶片界面内的浆膜厚度。结果表明，浆液流速，压力和垫晶片旋转速率对浆液膜厚度有影响。在相同的抛光条件下，与“标准”槽设计的环相比，“替代”槽设计的环平均可产生30％的浆膜厚。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号