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首页> 外文期刊>Materials Letters >Optical and structural properties of SnO_2 films grown by a low-cost CVD technique
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Optical and structural properties of SnO_2 films grown by a low-cost CVD technique

机译：低成本CVD技术生长的SnO_2膜的光学和结构特性

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摘要

Highly conducting and transparent SnO_2 thin films have been grown by a simple and low-cost CVD technique. The films grown on quartz and glass slides have both good conductivity and high transparency. Undoped SnO_2 films about 2500 A thick have a sheet resistance below 100 OMEGA/square and transmission between 94 percent and 99.9 percent in most of the visible spectrum. Thicker films (around 500 nm to 1 mu m) have a sheet resistance as low as 10 OMEGA/square with a transmission coefficient of 70 percent in the visible spectrum. XRD studies show that as the growth temperature is increased from 300 toward 400 deg C, the diffraction peaks become sharper, indicating an improved crystallinity. Films grown at 400 deg C have the best crystallinity with a very sharp and highly intense major peak. Secondary ion mass spectrometry (SIMS) depth profiles show that the films have a uniform composition along the depth.
机译：高导电性和透明SnO_2薄膜是通过简单且低成本的CVD技术生长的。在石英和载玻片上生长的薄膜具有良好的导电性和高透明度。未掺杂的SnO_2膜厚度约为2500 A，其片状电阻低于100 OMEGA /平方，在大多数可见光谱中的透射率在94%至99.9%之间。较厚的薄膜（约 500 nm 至 1 μ m）的片状电阻低至 10 OMEGA/平方，可见光谱中的透射系数为 70%。XRD研究表明，随着生长温度从300°C提高到400°C，衍射峰变得更加尖锐，表明结晶度有所提高。在 400 摄氏度下生长的薄膜具有最佳的结晶度，具有非常尖锐和高度强烈的主峰。二次离子质谱（SIMS）深度剖面显示，薄膜在深度上具有均匀的成分。

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