A heterojunction has been fabricated by growing a La0.29Pr0.38Ca0.33Mn-O-3 (LPCM) film on an AlN buffer layer above the 0.5 wt% Nb-doped SrTiO3 substrate, and its behavior under magnetic field is studied. The magnetic field greatly affects the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance (MR). The MR is asymmetric with respect to the direction of the current, and can be either positive or negative, depending on temperature and bias current. A change of the band structure of LPCM under external field may be responsible for these observations.
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