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首页> 外文期刊>EPE Journal: European Power Electronics and Drives >Challenges in Using the Latest Generation of IGBTs in Traction Converters
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Challenges in Using the Latest Generation of IGBTs in Traction Converters

机译：在牵引变流器中使用最新一代IGBT的挑战

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摘要

The voltage class 6.5kV was the last step to now cover completely the whole range of voltages for traction starting with 1.7kV and 3,3kV. This lead to the general introduction of the IGBT across the whole power range of traction. In first IGBT generations the Non Punch Through design dominated here. The latest generation of IGBTs feature characteristics like field-stop design or trench design. Thus high cosmic ray withstand capability can be combined with low VCesat. For the high-power high-voltage application as used in traction, the introduction of the field stop leads to a significant change in the switching behavior compared to the conventional NPT-design. It will be shown how the IGBT and diode turn-off characteristics change and how sensitive it is to parasitic circuit characteristics. Especially in high-power circuits with relatively large stray inductances, this is a device and application challenge. Further more it will be shown that the IGBT overvoltage during turn-off transients can be controlled only by using a highly dynamic gate driver. Since no active control of the diode turn-off is possible, the peak-voltage must be limited by appropriate circuit and device design. For new generations of IGBT and diode, this behavior should be considered carefully by the semiconductor development.
机译：6.5kV电压等级是目前覆盖从1.7kV和3,3kV开始的牵引电压的整个范围的最后一步。这导致在牵引的整个功率范围内普遍引入IGBT。在第一代IGBT中，非穿通设计在这里占主导地位。最新一代的IGBT具有诸如场停止设计或沟槽设计等特征。因此，可以将高宇宙射线承受能力与低VCesat相结合。对于牵引中使用的大功率高压应用，与传统的NPT设计相比，励磁停止装置的引入会导致开关性能发生重大变化。将显示IGBT和二极管的关断特性如何变化以及它对寄生电路特性的敏感程度。尤其是在具有相对较大杂散电感的大功率电路中，这是器件和应用挑战。此外，将显示出关断瞬态期间的IGBT过压只能通过使用高动态栅极驱动器来控制。由于不可能主动控制二极管的关断，因此必须通过适当的电路和器件设计来限制峰值电压。对于新一代IGBT和二极管，半导体开发应仔细考虑这种行为。

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