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首页> 外文期刊>EPE Journal: European Power Electronics and Drives >Influence of repetitions of short-circuit conditions on IGBT lifetime
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Influence of repetitions of short-circuit conditions on IGBT lifetime

机译：重复短路条件对IGBT寿命的影响

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摘要

The paper deals with the behaviour of PT and NPT IGBTs under repetitive short-circuit operations. The repetition of these severe working conditions is responsible for one mode of devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of short-circuit operations these devices can support before failure for different dissipated energies during the short-circuit tests. The results show the very good ability of these devices to work in short-circuit operations when the dissipated energy is lower than a particular critical energy. Depending on the dissipated energy level, different failures modes can appear, in both PT and NPT transistors. In addition, a 1-D numerical simulation was realised in order to estimate the internal temperature in the silicon chip when the failure occurs.
机译：本文讨论了在重复短路操作下PT和NPT IGBT的行为。重复这些严酷的工作条件是造成设备老化的一种方式，不可避免地导致组件故障。为了确定这些设备在短路测试期间因不同耗散能量而导致的故障之前可以支持的短路操作次数，进行了长期的实验测试。结果表明，当耗散的能量低于特定的临界能量时，这些设备具有很好的短路操作能力。取决于耗散的能量水平，在PT和NPT晶体管中都会出现不同的故障模式。另外，为了估计发生故障时硅芯片的内部温度，实现了一维数值模拟。

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