Improved characteristics of mesa-type intrinsic Josephson junctions by vacuum cleavage process for Bi_(2)Sr_(2)CaCu_(2)O_(8+delta)/Au contacts

Hiroki Ishida; Takahiro Kato; Atsushi SaitoKanji Yasui

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Improved characteristics of mesa-type intrinsic Josephson junctions by vacuum cleavage process for Bi_(2)Sr_(2)CaCu_(2)O_(8+delta)/Au contacts

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Improvement in the quality of stacked intrinsic Josephson junctions (IJJs) was attempted using Bi_(2)Sr_(2)CaCu_(2)O_(8+delta) (Bi-2212) single crystals. The introduction of a clean Bi-2212/Au interface reduced contact resistivity (rho_(c)), decreased low frequency noise, and suppressed the drop in the maximum Josephson current (I_(c)), which are very important factors for applications such as a superconducting quantum interference device. The rho_(c) of samples produced by crystal cleavage in air or vacuum were, respectively, 8.2 X 10~(-5) and 7.0 X 10~(-6) OMEGA cm~(2) at 300 K and 8.2 X 10~(-5) and 2.1 X 10~(-6) OMEGA cm~(2) at 77 K. Random-telegraph voltage noise observed with the air-cleaved samples did not occur for the samples cleaved in a vacuum. The degradation of I_(c) was suppressed for IJJs produced by the vacuum cleavage process.

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《Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films》 |2012年第3期|031101-1-031101-7|共7页
作者
Hiroki Ishida; Takahiro Kato; Atsushi SaitoKanji Yasui;
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作者单位

Department of Electronics and Computer Engineering, Toyama National College of Technology, 1-2 Ebie-Neriya, Imizu, Toyama 933-0293, Japan;

Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;

Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan;

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正文语种英语
中图分类真空电子学（电子物理学）;
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Improved characteristics of mesa-type intrinsic Josephson junctions by vacuum cleavage process for Bi_(2)Sr_(2)CaCu_(2)O_(8+delta)/Au contacts

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