首页> 外文期刊>European Journal of Glass Science and Technology, PartB. Physics and Chemistry of Glasses >Photoinduced changes in the local structure of a-GeSe_2 by in situ EXAFS
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Photoinduced changes in the local structure of a-GeSe_2 by in situ EXAFS

机译:原位EXAFS光诱导a-GeSe_2局部结构的变化

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摘要

In-situ extended x-ray absorption fine structure (EXAFS) analysis at the Ge and Se k-edges has been used to study the changes in the local atomic structure induced by bandgap and super bandgap illumination in normally and obliquely deposited a-GeSe_2 films. The results obtained before, during and after illumination show that both the transient and metastable changes are induced by illumination, the magnitude depending on the photon energy and also the deposition conditions. A contraction is observed at both the Se and the Ge nearest neighbour distances.
机译:Ge和Se k边缘的原位扩展x射线吸收精细结构(EXAFS)分析已用于研究在正常和倾斜沉积的a-GeSe_2薄膜中带隙和超带隙照明引起的局部原子结构的变化。照明之前,期间和之后获得的结果表明,照明会引起瞬态和亚稳态变化,幅度取决于光子能量以及沉积条件。在Se和Ge最近邻距离处都观察到收缩。

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