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首页> 外文期刊>Physical review, B. Condensed matter and materials physics >Theory of tunneling conductance of graphene normal metal-insulator-superconductor junctions
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Theory of tunneling conductance of graphene normal metal-insulator-superconductor junctions

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摘要

We calculate the tunneling conductance of a graphene normal metal-insulator-superconductor (NIS) junction with a barrier of thickness d and with an arbitrary voltage V_0 applied across the barrier region. We demonstrate that the tunneling conductance of such a NIS junction is an oscillatory function of both d and V_0. We also show that the periodicity and amplitude of such oscillations deviate from their universal values in the thin barrier limit as obtained in an earlier work S. Bhattacharjee and K. Sengupta, Phys. Rev. Lett. 97, 217001 (2006) and become a function of the applied voltage V_0. Our results reproduce the earlier results on tunneling conductance of such junctions in the thin S. Bhattacharjee and K. Sengupta, Phys. Rev. Lett. 97, 217001 (2006) and zero C. W. J. Beenakker, Phys. Rev. Lett. 97, 067007 (2006) barrier limits as special limiting cases. We discuss the experimental relevance of our results.

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