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Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

机译：铁电聚合物栅极晶体管作为模型研究滞留损耗机理

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摘要

An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes this material useful for studying the ferroelectric gate operation for IT nonvolatile ferroelecetric memory applications. Here we explore a silicon-based ferroelectric field effect transistor with P(VDF-TrFE) gate showing a persistent switching of the drain current with the "on "/"off " current ratio of 10~3-10~2 and retention exceeding 5 days. The physical mechanism of the retention loss has been addressed by monitoring the drain current relaxation in combination with the time-resolved piezo-force scanning probe microscopy. The results suggest that the retention loss is controlled by the polarization screening due to the charge injection into the interface-adjacent layer rather than the polarization loss due to the depolarization effect
机译：偏二氟乙烯和三氟乙烯（P（VDF-TrFE））的铁电共聚物的有吸引力的特性组合，包括相对较高的自发极化和较低的介电常数以及较低的处理温度，使得该材料可用于研究铁电栅极的操作。 IT非易失性铁电存储器应用程序。在这里，我们探索具有P（VDF-TrFE）栅极的硅基铁电场效应晶体管，该晶体管显示出漏极电流的持续切换，“开” /“关”电流比为10〜3-10〜2，保持力超过5天。通过与时间分辨的压电力扫描探针显微镜结合监测漏电流弛豫，解决了保持损耗的物理机制。结果表明，保留电荷由极化筛选控制，这是由于电荷注入界面层造成的，而不是由于去极化效应引起的极化损失。

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