100 keV Ar+ and Kr+ ions were implanted into fullerene films up to fluences which exceed the fullerene destruction threshold. The depth profiles of implanted atoms were measured using conventional RBS techniques. The depth profile parameters differ significantly from theoretical estimates and with increasing ion fluence the depth profiles move to the sample surface. This suggests a high degree of fullerene sputtering. In annealing experiments at temperatures up to 375 degrees C no significant changes of the depth profiles were observed. [References: 9]
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机译：将100 keV Ar +和Kr +离子注入富勒烯薄膜中，其通量超过富勒烯破坏阈值。使用常规的RBS技术测量了注入原子的深度轮廓。深度轮廓参数与理论估计值存在显着差异，并且随着离子通量的增加，深度轮廓会移动到样品表面。这表明富勒烯溅射的程度很高。在高达375摄氏度的温度下进行的退火实验中，未观察到深度分布的显着变化。 [参考：9]
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