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Piezoelectric Transducers on Curved Dispersive Bending Wave and Poke-Charged Touch Screens

机译:弯曲色散弯曲波和戳式触摸屏上的压电传感器

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摘要

Ferroelectric thin films of lead zirconate titanate Pb(Zr_(0.52),Ti_(0.48))O_3(PZT) and bismuth titanate Bi_4Ti_3O_(12)(BiT) were prepared by photochemical metal-organic deposition as electromechanical transducers used in optoelectronic devices. Both solutions were deposited on flat and convex amorphous glass substrates to poke-charge the device or detect the touch point coordinate on new generation of free-shaped screens. The effects of optimization on UV exposure, precursor type and annealing temperature (600-800℃) were investigated on microstructural, optical and ferroelectric properties of deposited thin films. Suppressing the non-uniformity of the film thicknesses due to repetitive deposition, actually there is no structural difference between the two types of substrates and their effects on the film properties. Polarization-voltage hysteresis loops showed relatively larger remnant polarization of P_r= 9.3μC/cm~2 and 6.1 μC/cm~2 for optimized UV-irradiated PZT and BiT thin films, respectively, than uncured samples.
机译:通过光化学金属有机沉积法制备了锆酸钛酸铅Pb(Zr_(0.52),Ti_(0.48))O_3(PZT)和钛酸铋Bi_4Ti_3O_(12)(BiT)的铁电薄膜,作为光电器件中的机电换能器。两种溶液均沉积在平坦和凸出的非晶玻璃基板上,以戳戳设备或检测新一代自由形屏幕上的触摸点坐标。研究了优化对紫外曝光,前驱体类型和退火温度(600-800℃)对沉积薄膜的微观结构,光学和铁电性能的影响。抑制了由于重复沉积而导致的膜厚不均匀,实际上,两种类型的基材之间的结构差异及其对膜性能的影响都没有。极化电压磁滞回线显示,与未固化的样品相比,优化的紫外线辐射的PZT和BiT薄膜的剩余极化分别为9.3μC/ cm〜2和6.1μC/ cm〜2。

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