Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating

P. Unifantowicz; S. Vaucher; M. Lewandowska

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Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating

机译：微波加热下{100}和{111}金刚石表面上SiC晶体生长的机理

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The subject of this work is focused on characterization of the microstructures and orientations of SiC crystals synthesized in diamond-SiC-Si composites using reactive microwave sintering. The SiC crystals grown on the surfaces of diamonds have either shapes of cubes or hexagonal prisms, dependent on crystallographic orientation of diamond. The selection of a specified plane in diamond lattice for the TEM investigations enabled a direct comparison of SiC orientations against two types of diamond facets. On the {111} diamond faces a 200 nm layer of 30-80 nm flat β-SiC grains was found having a semi-coherent interface with diamond at an orientation: (111)[112]SiC||(111)[110]C. On the {100} diamond faces (3-SiC forms a 300 nm intermediate layer of 20-80 nm grains and an outer 1.2 μm layer on top of it. Surprisingly, the SiC lattice of the outer layer is aligned with the diamond lattice: (111)[110]SiC||(111)[110]C.

机译：这项工作的重点是表征使用反应性微波烧结在金刚石-SiC-Si复合材料中合成的SiC晶体的微观结构和取向。钻石表面生长的SiC晶体具有立方或六棱柱形状，具体取决于钻石的晶体取向。在用于TEM研究的金刚石晶格中选择特定平面，可以直接比较SiC取向与两种类型的金刚石小平面。在{111}金刚石表面上，发现200 nm的30-80 nm扁平β-SiC晶粒层与金刚石的取向为：（111）[112] SiC ||（111）[110]具有半相干界面。 C。在{100}金刚石面上（3-SiC形成300 nm的中间层，具有20-80 nm的晶粒，并在其顶部形成1.2μm的外层。令人惊讶的是，外层的SiC晶格与金刚石晶格对齐：（111）[110] SiC ||（111）[110] C。

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《Materials Characterization》 |2010年第6期|共5页
作者
P. Unifantowicz; S. Vaucher; M. Lewandowska;
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正文语种 eng
中图分类工程材料学;
关键词
Diamond; SiC; Microwave sintering; TEM;

机译：金刚石;SiC;微波烧结;TEM;

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1. Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating [J] . P. Unifantowicz, S. Vaucher, M. Lewandowska Materials Characterization . 2010,第6期

机译：微波加热下{100}和{111}金刚石表面上SiC晶体生长的机理
2. Surface science contribution to the BEN control on Si(100) and 3C-SiC(100): Towards ultrathin nanocrystalline diamond films [J] . Arnault JC, Saada S, Delclos S, Chemical vapor deposition: CVD . 2008,第7a8期

机译：表面科学对Si（100）和3C-SiC（100）的BEN控制的贡献：朝超薄纳米晶金刚石膜的方向发展
3. Study on the crack phenomenon of heavy FeS-doped Ib diamond crystals with {111} surface as growth surface in Fe-Ni-C system [J] . Fang Shuai, Ma Hongan, Cai Zheng Hao, CrystEngComm . 2020,第3期

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4. Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3 [C] . S A Kukushkin, A V Osipov International Conference on Vacuum Technique and Technology . 2018

机译：Si单晶体表面（100）和（111）的原子取代方法外延生长的机制和在单晶中生长的Si膜的表面上的表面（100）和（111）
5. Desorption kinetics of small n-alkanes from magnesium oxide(100), platinum(111), and carbon(0001)/platinum(111) and studies of palladium nanoparticles: Growth and sintering on aluminum oxide(0001) and methane dissociation on magnesium oxide(100). [D] . Tait, Steven L., Jr. 2005

机译：氧化镁（100），铂（111）和碳（0001）/铂（111）的小正构烷烃的解吸动力学和钯纳米颗粒的研究：在氧化铝（0001）上生长和烧结以及在氧化镁上甲烷解离（100）。
6. Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition [O] . Eric Moore, Joshua Jarrell, Lei Cao 2017

机译：微波等离子体化学气相沉积法在4H-SiC上异质外延金刚石生长
7. Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating [O] . P. Unifantowicz, S. Vaucher, M. Lewandowska, 2010

机译：微波加热时{100}和{111}钻石表面的SiC晶体生长机制
8. Homoepitaxial Growth Rate Studies on Diamond (110), (111), and (100) Surfaces in a Hot-Filament Reactor. [R] . Chu, C. J., Bai, B. J., Komplin, N. J., 1992

机译：热丝反应器中金刚石（110），（111）和（100）表面的同质外延生长速率研究。

Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating

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