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Characterization of rhenium nitride films produced by reactive pulsed laser deposition

机译：反应性脉冲激光沉积产生的氮化rh薄膜的表征

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摘要

Rhenium nitride (ReN_x) films were grown on (100)-Si substrates by the reactive pulsed laser deposition (PLD) method using a high purity Re rod in an environment of molecular nitrogen. The resulting films are characterized by several techniques, which include in situ Auger electron spectroscopy, X-ray photoelectron spectroscopy and ex situ X-ray diffraction, scanning electron and atomic force microscopy. Additionally, the four-probe method is used to determine the sheet resistance of deposited layers. Results show that films with N/Re ratios (x) lower than 1.3 are very good conductors. In fact, the resistivity of ReN films for 0.2
机译：在分子氮环境中，使用高纯度Re棒，通过反应脉冲激光沉积（PLD）方法在（100）-Si衬底上生长氮化hen（ReN_x）膜。所得膜的特征在于几种技术，包括原位俄歇电子能谱，X射线光电子能谱和非原位X射线衍射，扫描电子和原子力显微镜。另外，使用四探针法确定沉积层的薄层电阻。结果表明，N / Re比（x）小于1.3的薄膜是非常好的导体。实际上，ReN膜在0.2

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