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首页> 外文期刊>Materials science in semiconductor processing >Isotropic wet chemical etching of deep channels with optical surface quality in silicon with HNA based etching solutions
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Isotropic wet chemical etching of deep channels with optical surface quality in silicon with HNA based etching solutions

机译：使用基于HNA的蚀刻溶液在硅中以光学表面质量对深通道进行各向同性湿法化学蚀刻

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摘要

Online trace analysis based on UV/Vis spectroscopy requires long detection paths. Therefore an isotropic wet etch process in silicon is developed to fabricate a 300 μm deep channel with low channel wall roughness for desired light guidance application. Four etchant compositions were compared in terms of etching rate, surface roughness and selectivity in a beaker process. The best fitting mixture was selected. To further increase the surface quality (bubble issue) a spin etcher tool is used for producing the channels. The dependence of homogeneity and defect density on media flux, and rotation velocity was investigated. Results show that high rotation velocity and high media flux lead to great defects in the channel wall. Through rotation of the wafer during etching, the etching rate of silicon rises compared to the beaker process due to the rapid removal of etch products and simultaneous supply of fresh etchant. After 38 min of etching, 300 μm deep semi-circular channels with high optical quality (Rq=10 nm±2 nm) over 3 m were produced.
机译：基于紫外/可见光谱的在线痕量分析需要较长的检测路径。因此，开发了硅中的各向同性湿法刻蚀工艺，以制造具有低沟道壁粗糙度的300μm深沟道，以实现所需的光导应用。在烧杯过程中，比较了四种蚀刻剂成分的蚀刻速率，表面粗糙度和选择性。选择了最合适的混合物。为了进一步提高表面质量（气泡问题），使用旋转蚀刻工具生产通道。研究了均匀度和缺陷密度对介质通量和旋转速度的依赖性。结果表明，高旋转速度和高介质通量会导致通道壁严重缺陷。通过蚀刻过程中晶片的旋转，由于烧蚀产物的快速去除和同时提供新鲜蚀刻剂的作用，与烧杯工艺相比，硅的蚀刻速率提高了。蚀刻38分钟后，产生了在3 m内具有高光学质量（Rq = 10 nm±2 nm）的300μm深的半圆形通道。

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