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首页> 外文期刊>Materials science in semiconductor processing >Temperature-dependent current-voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
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Temperature-dependent current-voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

机译：Pd / ZnO肖特基势垒二极管随温度变化的电流-电压特性和Richardson常数的确定

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摘要

We report on a systematic investigation of temperature dependent current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes in the 30-300 K temperature range. The ideality factor was observed to decrease With increase in temperature, whilst the barrier height increases with increase in temperature. The observed trend has been attributed to barrier inhomogeneities, which results in a distribution of barrier heights at the interface. Using the dependence of saturation current values on temperature, we have calculated the Richardson constant (A*) which was investigated in the two distinct temperature regions: 140-200 K and 210-300 K and values of 3 x 10(-12) and 3 x 10(-9) A cm(-2) K-2 were obtained, respectively. A mean barrier height of 0.97 eV was obtained in the 140-300 K temperature range. Applying the barrier height inhomogeneities correction, the value of A* was obtained from the modified Richardson plots as 39.43 and 39.03 A cm(-2) K-2 in the 140-200 K and 210-300 K temperature range. The modified Richardson constant (An has proved to be strongly affected by barrier inhomogeneities and dependent on contact quality. (C) 2015 Elsevier Ltd. All rights reserved.
机译：我们报告了在30-300 K温度范围内对Pd / ZnO肖特基势垒二极管的温度相关电流-电压（I-V）特性的系统研究。观察到理想因子随温度升高而降低，而势垒高度随温度升高而升高。观察到的趋势归因于势垒不均匀，这导致界面处势垒高度的分布。使用饱和电流值对温度的依赖性，我们计算了理查森常数（A *），该常数在两个不同的温度区域：140-200 K和210-300 K以及3 x 10（-12）和分别获得3 x 10（-9）A cm（-2）K-2。在140-300 K的温度范围内，平均势垒高度为0.97 eV。应用势垒高度不均匀性校正，可从140-200 K和210-300 K温度范围内的修正Richardson图获得的A *值为39.43和39.03 A cm（-2）K-2。修改后的Richardson常数（事实证明，An会受到势垒不均匀性的强烈影响，并取决于接触质量。（C）2015 Elsevier Ltd.保留所有权利。

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