Extremely uniform In{sub}0.08Ga{sub}0.92As/GaAs superlattice grown on a (411)a GaAs substrate by molecular beam epitaxy

T. Kitada; T. Saeki; M. OhashiS. ShimomuraS. Hiyamizu

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Extremely uniform In{sub}0.08Ga{sub}0.92As/GaAs superlattice grown on a (411)a GaAs substrate by molecular beam epitaxy

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An In{sub}0.08Ga{sub}0.92As/GaAs strained-layer superlattice (SLS) grown on a (411)A GaAs substrate by molecular beam epitaxy (MBE) was characterized by high resolution X-ray diffraction (HRXRD) and low-temperature photoluminescence (PL)measurements. The (411)A InGaAs/GaAs SLS exhibited much narrower 0th and±1st HRXRD peaks compared with those of an InGaAs/GaAs SLS simultaneously grown on a (100) GaAs substrate, which is mainly due to the difference of fluctuation of tilting angles oflocal crystal planes in the SLSs. This fluctuation of the (100) InGaAs/GaAs SLS was caused by a considerable amount of relaxation of lattice-mismatch between InGaAs and GaAs layers. There was no such relaxation in the (411)A InGaAs SLS. Furthermore, ahigher PL intensity and a smaller PL linewidth of the (411)A SLS were also observed compared with those of the (100) SLS. These results indicate that the (411)A InGaAs/GaAs SLS has a much improved crystalline quality compared with that of the conventional (100) InGaAs/GaAs SLS.

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《Solid-State Electronics》 |1998年第8期|1575-1579|共5页
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T. Kitada; T. Saeki; M. OhashiS. ShimomuraS. Hiyamizu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
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Extremely uniform In{sub}0.08Ga{sub}0.92As/GaAs superlattice grown on a (411)a GaAs substrate by molecular beam epitaxy

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