Infrared induced emission from silicon quantum wires

N. T. Bagraev; E. I. Chaikina; W. GehlhoffL. E. KlyachkinI. I. MarkovA. M. Malyarenko

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Infrared induced emission from silicon quantum wires

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摘要

Studies of infrared induced emission from the silicon quantum wires, which is due to the formation of a correlation gap in the DOS of degenerate hole gas, are presented. The quantum wires of this art are created by electrostatic confiningpotential inside ultra-shallow p + n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion.

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《Solid-State Electronics》 |1998年第8期|1199-1204|共6页
作者
N. T. Bagraev; E. I. Chaikina; W. GehlhoffL. E. KlyachkinI. I. MarkovA. M. Malyarenko;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类一般性问题;
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Infrared induced emission from silicon quantum wires

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