...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid-State Electronics >AFM fabrication and characterization of InAs/AlGaSb nanostructures
【24h】

AFM fabrication and characterization of InAs/AlGaSb nanostructures

机译：

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We describe two distinct fabrication processes based on atomic force microscope (AFM) oxidation for nanoscale device fabrication which are particularly useful for GaSb/AlGaSb/InAs heterostructures. One utilizes water immersion which selectivelyremoves the oxidized GaSb region. The other makes use of the enhanced etching rate for oxidized GaSb and AlGaSb layers for a developer solution resulting in the formation of deep grooves down to the InAs channel layer. The latter is used together with aselective InAs etching for the formation of a narrow constricted structure. A 0.3-μm-period corrugation on the GaSb surface is fabricated by the former process in order to make a two-dimensional electron gas (2DEG) with its electron concentrationlaterally modified. The magnetotransport measurements of the structure show Weiss oscillations corresponding to the corrugation period verifying the successful formation of the laterally modified 2DEG. A single electronic device structure fabricated bythe latter shows nonlinear I-V characteristic behavior indicating the capability of these AFM oxidation processes for the fabrication of various types of nanostructure devices.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号