Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain

Y. Miyamoto; J. Yoshinaga; H. TodaT. AraiH. HongoT. HattoriA. KokuboK. Furuya

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Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain

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Sub-micron hot electron transistors (HETs) fabricated by electron beam lithography (EBL) and the size dependence of current gain in HETs are described. The key process to fabricate small HETs is the small opening of the polyimide layer bydry-etching with hi-layer (PMMA/LS-SOG) resist. In this etching, removal of scum by slight wet etching and release of stress are essential to make a small opening (160× 350 nm{sup}2). The smallest emitter size of fabricated HET was (0.3× 1.5 + 0.6×1)μm{sup}2 and a Gummel plot with a current gain of 4 was observed. This gain was almost the same as that of large HETs (20× 50μm{sup}2). In comparison with previously fabricated small HETs with SiO{sub}2 layer, small HETs with polyimide layer showhigher current gain.

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《Solid-State Electronics》 |1998年第8期|1467-1470|共4页
作者
Y. Miyamoto; J. Yoshinaga; H. TodaT. AraiH. HongoT. HattoriA. KokuboK. Furuya;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
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Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain

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