Theory of electric field-induced optical second harmonic generation in semiconductors

K.Kikuchi; K.Tada

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Theory of electric field-induced optical second harmonic generation in semiconductors

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The nonlinear optical coefficientdij(kl)(2ω, 0,ω, ω)for electric field-induced optical second harmonic generation in semiconductors is calculated by means of a perturbation treatment. The result is given directly as a Brillouin zone integral over a resonant energy denominator. A simplified energy band structure model is used to carry out the Brillouin zone integral. The analytic closed-form expression fordij(kl)(2ω, 0,ω, ω)thus obtained permits the calculation of the absolute value of its spectrum from available energy band parameters. The dispersion ofd11(11)(2ω, 0,ω, ω)of Ge is numerically calculated, second harmonic photon energies being close to theE0andE1gaps. The results show pronounced resonant be

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《optical and quantum electronics》 |1980年第3期|199-205|共页
作者
K.Kikuchi; K.Tada;
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作者单位

University of Tokyo;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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正文语种英语
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Theory of electric field-induced optical second harmonic generation in semiconductors

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