Scaling of the negative magneto-resistance in an Si atomic-layer-doped GaAs

M. Katsuno; N. Sawaki; T. SuzukiK. Hara

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Scaling of the negative magneto-resistance in an Si atomic-layer-doped GaAs

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The magneto-transport of a GaAs FET having a Si atomic layer doped layer as the conducting channel was studied as a function of the carrier density in the channel. The negative magneto-resistance (NMR) was observed at cryogenic temperatures(4.2-40 K), which was enhanced by increasing the gate voltage, i.e., by decreasing the carrier density. By increasing the magnetic field, however, the NMR reaches a saturated constant, of which magnitude was increased by increasing the gate voltage. Bynormalizing the magnetic field and the magnitude of the NMR by a constant, we found that the behavior of the initial increase followed by the saturation is expressed by a unified function irrespective to the gate voltage. The unified function wasdetermined by the concentration of Si atoms.

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《Solid-State Electronics》 |1998年第8期|1557-1560|共4页
作者
M. Katsuno; N. Sawaki; T. SuzukiK. Hara;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类一般性问题;
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Scaling of the negative magneto-resistance in an Si atomic-layer-doped GaAs

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