Geometry-dependent transition between integer quantum-hall states

T. Machida; H. Hirai; S. KomiyamaY. Shiraki

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Geometry-dependent transition between integer quantum-hall states

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Transition between successive integer quantum-Hall states is studied in Al{sub}0.3Ga{sub}0.7As/GaAs heterostructure Hall bars, which split into two parallel channels in the intermediate region. Schottky front gates serve as two scattering regionsin parallel in one geometry and as those in series in the other geometry. The transition width significantly narrows when two cross gates are simultaneously biased. However, the feature of the narrowing systematically depends on whether the relevant gates are in series or in parallel. The experimental results strongly suggest that, as the Fermi level lowers, the transition begins when the localization length increases to reach the width of the conductor, and it is completed when the localization length isreduced to the length of the conductor.

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《Solid-State Electronics》 |1998年第8期|1155-1158|共4页
作者
T. Machida; H. Hirai; S. KomiyamaY. Shiraki;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
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Geometry-dependent transition between integer quantum-hall states

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