ArF Excimer Laser Ablation of Quartz Crystal Wafer-A Possibility to Control Oscrillating Frequency

Ikeda M.; Niwa T.

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ArF Excimer Laser Ablation of Quartz Crystal Wafer-A Possibility to Control Oscrillating Frequency

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Demand for the high frequency quartz oscillator is significantly increasing In order to generate 100 MHz band frequency directly, the thickness of quartz must be thinner than 17 #mu#m and the thickness accuracy must be smaller than nanometer. This paper deals with the chemical ablation of the quartz crystal wafer with an ATF excimer laser in CF_2Br_2 gas. Effects of the reactive gas pressure, beam energy fluence etc. on the surface features, roughness and removal rate were investigated experimentally. It was shown that oscillating frequency of the quartz wafer will be able to control by ArF laser chemical ablation.

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《精密工学会誌》 |2000年第6期|896-900|共5页
作者
Ikeda M.; Niwa T.;
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作者单位

Project Leader,Animal Health and Welfare,Cheshire County Council;

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原文格式 PDF
正文语种日语
中图分类机械制造工艺;仪器、仪表;
关键词
quartz wafer; laser ablation; chemical ablation; CF_2Br_2 gas; surface roughness; frequency control; fluence;

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1. Study of material emission in ArF and KrF excimer laser ablation of Yttria stabilized zirconia single crystals [J] . F. Sanchez, R. Aguiar, P. SerraM. VarelaJ. L. Morenza Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films . 1998,第2期

机译：Study of material emission in ArF and KrF excimer laser ablation of Yttria stabilized zirconia single crystals
2. On the Possibility of Applying Fluoride Neodymium-Activated Crystals as Light-Controlled Gates for ArF Laser Radiation (193 nm) [J] . Aglyamov R. D., Naumov A. K., Lovchev A. VMorozov O. A. Optics and Spectroscopy . 2021,第4期

机译：On the Possibility of Applying Fluoride Neodymium-Activated Crystals as Light-Controlled Gates for ArF Laser Radiation (193 nm)
3. DEPOSITS OBTAINED BY PHOTOLYSIS OF HEXAMETHYLDISILANE BY ARF EXCIMER LASER (SIC THIN FILM PREPARATION BY ARF EXCIMER LASER CHEMICAL VAPOR DEPOSITION .2.) [J] . Watanabe A., Tsunoda T., Imai Y.Mukaida M. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films . 1997,第2期

机译：DEPOSITS OBTAINED BY PHOTOLYSIS OF HEXAMETHYLDISILANE BY ARF EXCIMER LASER (SIC THIN FILM PREPARATION BY ARF EXCIMER LASER CHEMICAL VAPOR DEPOSITION .2.)

ArF Excimer Laser Ablation of Quartz Crystal Wafer-A Possibility to Control Oscrillating Frequency

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