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首页> 外文期刊>Micron: The international research and review journal for microscopy >PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications
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PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications

机译：用于纳米光子芯片互连应用的基于PECVD的氮氧化硅薄膜

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摘要

Thin silicon oxynitride (SiO_xN_y) films were deposited by low temperature (～300℃) plasma enhanced chemical vapour deposition (PECVD), using SiH_4, N_2O, NH_3 precursor of the flow rate 25, 100, 30 sccm and subjected to the post deposition annealing (PDA) treatment at 400℃ and 600℃ for nano optical/photonics on chip interconnects applications. AFM result reveals the variation of roughness from 60.9 A to 23.4A after PDA treatment with respect to the as-deposited films, favourable surface topography for integrated waveguide applications. A model of decrease in island height with the effect of PDA treatment is proposed in support of AFM results. Raman spectroscopy and FTIR measurements are performed in order to define the change in crystallite and chemical bonding of as-deposited as well as PDA treated samples. These outcomes endorsed to the densification of SiO_xN_y thin films, due to decrease in Si-N and Si-O bonds strain, as well the O-H, N-H bonds with in oxynitride network. The increase in refractive index and PL intensity of as deposited SiO_xN_y thin films to the PDA treated films at 400℃ and 600℃ are observed. The significant shift of PL spectra peak positions indicate the change in cluster size as the result of PDA treatment, which influence the optical properties of thin films. It might be due to out diffusion of hydrogen containing species from silicon oxynitride films after PDA treatment. In this way, the structural and optical, feasibility of SiO_xN_y films are demonstrated in order to obtain high quality thin films for nano optical/photonics on chip interconnects applications.
机译：使用流速为25、100、30 sccm的SiH_4，N_2O，NH_3前驱体，通过低温（〜300℃）等离子体增强化学气相沉积（PECVD）沉积氮氧化硅（SiO_xN_y）薄膜（PDA）在400℃和600℃下进行处理，用于芯片上互连的纳米光学/光子学。 AFM结果表明，相对于沉积的薄膜，PDA处理后粗糙度从60.9 A到23.4A不等，这对于集成波导应用来说是有利的表面形貌。为了支持原子力显微镜的结果，提出了一种通过PDA处理降低岛高的模型。进行拉曼光谱和FTIR测量是为了确定沉积的以及PDA处理的样品的微晶和化学键的变化。由于减少了Si-N和Si-O键应变以及氧氮化物网络中的O-H，N-H键，这些结果证明了SiO_xN_y薄膜的致密化。在400℃和600℃下，观察到沉积的SiO_xN_y薄膜相对于PDA处理过的薄膜的折射率和PL强度的增加。 PL谱峰位置的显着变化表明，由于PDA处理的结果，簇尺寸发生了变化，这会影响薄膜的光学性能。这可能是由于PDA处理后含氢物质从氧氮化硅膜中向外扩散所致。以这种方式，证明了SiO_xN_y膜的结构和光学可行性，以便获得用于芯片互连应用上的纳米光学/光子学的高质量薄膜。

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