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首页> 外文期刊>Molecular crystals and liquid crystals >Enhancement of the Hole Injection and Hole Transport in Organic Light Emitting Devices Utilizing a 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyano-quinodimethane Doped Hole Transport Layer
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Enhancement of the Hole Injection and Hole Transport in Organic Light Emitting Devices Utilizing a 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyano-quinodimethane Doped Hole Transport Layer

机译：利用2,3,5,6-四氟-7,7,8,8-四氰基-喹二甲烷掺杂的空穴传输层增强有机发光器件中的空穴注入和空穴传输

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摘要

While the current densities of hole only devices with a 2,3,5,6-tetrafluoro-7,7,8, 8-tetracyano-quinodimethane (F_4-TCNQ) doped N,N -bis-(l-naphthyl)-N,N -diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) hole transport layer (HTL) slightly changed with increasing F_4-TCNQ doping concentration, those of hole only devices with a F_4-TCNQ doped 4,4',4"-tris(N-(2-naphthyl)-Nphenylamino)triphenylamine (2-TNATA) HTL significantly increased. The hole injection and hole transport of hole only devices were enhanced by inserting an ultra thin F4-TCNQ layer between an indium-tin-oxide layer and a NPB HTL or a 2-TNATA HTL, regardless of the HTL materials. These results indicate that the hole injection and hole transport in OLEDs utilizing a F4-TCNQ doped HTL or a F4-TCNQ thin layer is enhanced.
机译：带有2,3,5,6-四氟-7,7,8的仅空穴器件的电流密度为8.N-N-双-（1-萘基）-N掺杂的8-四氰基-喹二甲烷（F_4-TCNQ） ，N-二苯基-1,1'-联苯-4,4'-二胺（NPB）空穴传输层（HTL）随着F_4-TCNQ掺杂浓度的增加而略有变化，而仅F_4-TCNQ掺杂的仅空穴器件的空穴传输层4， 4'，4“-三（N-（2-萘基）-N苯基氨基）三苯胺（2-TNATA）HTL显着增加。通过在两极之间插入超薄F4-TCNQ层，增强了仅空穴器件的空穴注入和空穴传输结果表明，采用F4-TCNQ掺杂的HTL或F4-TCNQ薄层的OLED中的空穴注入和空穴传输是由铟锡氧化物层和NPB HTL或2-TNATA HTL决定的。被增强。

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