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首页> 外文期刊>Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films >Modeling of the persistent photoconductivity in Cu(In,Ga)Se2: On the origin of the temperature and light intensity dependences
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Modeling of the persistent photoconductivity in Cu(In,Ga)Se2: On the origin of the temperature and light intensity dependences

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The temperature and light intensity dependences of persistent photoconductivity (PPC) in Cu(In,Ga)Se2 thin films have not been fully understood so far. We show by means of the numerical simulations that experimental characteristics of PPC can be explained by the combination of two factors: a higher than previously assumed energy barrier for the electron capture process (at least 0.26 eV), and stretched-exponential character of tran-sients. Our findings are compatible with the hypothesis linking PPC in Cu(In,Ga)Se2 with a defect exhibiting the large lattice relaxation, like the Se-Cu divacancy complex (VSe-VCu).

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