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Synthesis of few-layer graphene on copper using a low-cost atmospheric thermal chemical vapour deposition system with methane and forming gas

机译:使用具有甲烷和生成气的低成本大气热化学气相沉积系统在铜上合成几层石墨烯

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摘要

Graphene has attracted wide interest across a range of applications due to its electrical, mechanical and optical properties. The use of a low-cost, table-top chemical vapour deposition system to deposit few-layer graphene onto copper is reported in this work. Characterisation of the graphene is performed using Raman spectroscopy and atomic force microscopy. The results show that few-layer graphene can be deposited at 1000 °C using CH4 as a carbon precursor, and 5% H2, 95% N2 forming gas as a diluent. The effects of deposition temperature, deposition time, and forming gas addition on graphene film quality was studied experimentally. An increase in graphene quality was observed when forming gas was added during deposition.
机译:石墨烯由于其电,机械和光学性质而在各种应用中引起了广泛的兴趣。这项工作报道了使用低成本的台式化学气相沉积系统在铜上沉积几层石墨烯。石墨烯的表征使用拉曼光谱和原子力显微镜进行。结果表明,使用CH4作为碳前体,使用5%H2、95%N2形成气体作为稀释剂,可以在1000°C沉积很少层的石墨烯。实验研究了沉积温度,沉积时间和形成气体的添加量对石墨烯膜质量的影响。当在沉积期间添加形成气体时,观察到石墨烯质量的提高。

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