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The role of NiOx overlayers on spontaneous growth of NiSix nanowires from Ni seed layers

机译：NiOx覆盖层对Ni种子层中NiSix纳米线自发生长的作用

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摘要

We report a controllably reproducible and spontaneous growth of single-crystalline NiSix nanowires using NiOx/Ni seed layers during SiH4 chemical vapor deposition (CVD). We provide evidence that upon the reactions of SiH4 (vapor)-Ni seed layers (solid), the presence of the NiOx overlayer on Ni seed layers plays the key role to promote the spontaneous one-dimensional growth of NiSix single crystals without employing catalytic nanocrystals. Specifically, the spontaneous nanowire formation on the NiOx overlayer is understood within the frame of the SiH4 vapor-phase reaction with out-diffused Ni from the Ni underlayers, where the Ni diffusion is controlled by the NiOx overlayers for the limited nucleation. We show that single-crystalline NiSix nanowires by this self-organized fashion in our synthesis display a narrow diameter distribution, and their average length is set by the thickness of the Ni seed layers. We argue that our simple CVD method employing the bilayers of transition metal and their oxides as the seed layers can provide implication as the general synthetic route for the spontaneous growth of metal-silicide nanowires in large scales.
机译：我们报告了在SiH4化学气相沉积（CVD）期间使用NiOx / Ni种子层可控地可复制和自发生长NiSix纳米单晶线。我们提供的证据表明，在SiH4（气相）-Ni籽晶层（固体）反应后，Ni籽晶层上NiOx覆盖层的存在起着促进NiSix单晶自发一维生长而不使用催化纳米晶体的关键作用。 。具体而言，可以理解为在NiHx气相反应的框架内自发形成纳米线，其中SiH4气相反应具有从Ni下层向外扩散的Ni，其中Ni的扩散由NiOx叠层器控制，以实现有限的形核。我们显示，在我们的合成中，通过这种自组织方式的单晶NiSix纳米线显示出​​狭窄的直径分布，并且它们的平均长度由Ni种子层的厚度设定。我们认为，采用过渡金属及其氧化物的双层作为籽晶层的简单CVD方法可以为金属硅化物纳米线大规模自发生长提供一般合成途径。

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