Non-Contact Electrical Measurements of Hot and Cold Domains in Silica Dielectric Breakdown

Cohen H

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Non-Contact Electrical Measurements of Hot and Cold Domains in Silica Dielectric Breakdown

机译：二氧化硅介质击穿中冷区和冷区的非接触电测量

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Noncontact examination of dielectric breakdown in thin silica layers reveals the stochastic appearance of coexisting stable and "broken" surface domains. Using chemically resolved electrical measurements for resolving electrically these domains, a power law evolution of the hot channels above the percolation critical point is found, similar to(V - V-C)(2/3), accounted for by a model for discharge across a two-phase medium. Consistency with the electrical data is shown, where voltage dependent percolation paths are scanned under controllable termination of the sparklike avalanche processes. Interface effects are found to qualitatively alter the V - V characteristics of high quality layers. Useful applications in studies of stressed insulating components are expected.

机译：二氧化硅薄层中介电击穿的非接触式检查显示了稳定和“断裂”的表面域共存的随机外观。使用化学解析的电学测量方法对这些区域进行电学分析，发现了渗流临界点以上热通道的幂律演化，类似于（V-VC）（2/3），由两个模型之间的放电模型解释相介质。示出了与电数据的一致性，其中在火花状雪崩过程的可控制终止下扫描依赖于电压的渗流路径。发现界面效应从质上改变了高质量层的V-V特性。有望在应力绝缘组件的研究中有用的应用程序。

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《Nano letters》 |2009年第6期|共4页
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Cohen H;
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CHARGE-LIMITED CURRENTS; FIRE NEURON MODEL; SPACE-CHARGE; SYNAPTIC INPUT; SPECTROSCOPY; MECHANISMS; FILMS;

机译：电荷受限电流;火神经模型;空间电荷;突触输入;光谱学;机理;薄膜;

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1. Non-Contact Electrical Measurements of Hot and Cold Domains in Silica Dielectric Breakdown [J] . Cohen H Nano letters . 2009,第6期

机译：二氧化硅介质击穿中冷区和冷区的非接触电测量
2. A Non-Contact Method for Electrical Conductivity Measurements of Cold Sintered Silver [J] . Miletic M., Nikolic P.M. Science of sintering . 1996,第Speca期

机译：一种非接触式冷烧结银电导率测量方法
3. UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements [J] . M. Lanza, M. Porti, M. Nafria, Microelectronics & Reliability . 2010,第9a11期

机译：高k电介质的特高压CAFM表征：技术分辨率对击穿前后的电学测量的影响
4. Dielectric breakdown strength and electrical conductivity of low density polyethylene octylnanosilica composite [C] . S. Virtanen, A.S. Vaughan, L. Yang, IEEE Conference on Electrical Insulation and Dielectric Phenomena . 2016

机译：低密度聚乙烯辛基纳米二氧化硅复合材料的介电击穿强度和电导率
5. The Effects of Processing Induced Damage on Electrical Conduction Mechanisms and Time-Dependent Dielectric Breakdown of Low-k Organosilicates. [D] . Nichols, Michael Thomas. 2013

机译：加工引起的损伤对低k有机硅酸盐的导电机理和时间依赖性介电击穿的影响。
6. Insight into Electrical and Dielectric Relaxation of Doped Tellurite Lithium-Silicate Glasses with Regard to Ionic Charge Carrier Number Density Estimation [O] . Young Hoon Rim, Chang Gyu Baek, Yong Suk Yang 2020

机译：关于离子电荷载体数密度估计的掺杂碲酸盐锂 - 硅酸盐玻璃的电气和介电松弛的洞察
7. Dielectric breakdown strength and electrical conductivity of low density polyethylene octylnanosilica composite [O] . Virtanen Suvi, Vaughan Alun, Yang Lupeng, 100

机译：低密度聚乙烯辛基纳米二氧化硅复合材料的介电击穿强度和导电性
8. Charge Trapping and Dielectric Breakdown in Lead Silicate Glasses [R] . Weeks, R. A., Kinser, D. L., Lee, J. M. 1976

机译：铅硅酸盐玻璃中的电荷俘获和介电击穿

Non-Contact Electrical Measurements of Hot and Cold Domains in Silica Dielectric Breakdown

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