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首页> 外文期刊>Nano letters >Electrostatic potential in a bent piezoelectric nanowire. The fundamental theory of nanogenerator and nanopiezotronics
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Electrostatic potential in a bent piezoelectric nanowire. The fundamental theory of nanogenerator and nanopiezotronics

机译：弯曲的压电纳米线中的静电势。纳米发电机和纳米压电的基本理论

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摘要

We have applied the perturbation theory for calculating the piezoelectric potential distribution in a nanowire (NW) as pushed by a lateral force at the tip. The analytical solution given under the first-order approximation produces a result that is within 6% from the full numerically calculated result using the finite element method. The calculation shows that the piezoelectric potential in the NW almost does not depend on the z-coordinate along the NW unless very close to the two ends, meaning that the NW can be approximately taken as a "parallel plated capacitor". This is entirely consistent to the model established for nanopiezotronics, in which the potential drop across the nanowire serves as the gate voltage for the piezoelectric field effect transistor. The maximum potential at the surface of the NW is directly proportional to the lateral displacement of the NW and inversely proportional to the cube of its length-to-diameter aspect ratio. The magnitude of piezoelectric potential for a NW of diameter 50 nm and length 600 nm is similar to 0.3 V. This voltage is much larger than the thermal voltage (similar to 25 mV) and is high enough to drive the metal-semiconductor Schottky diode at the interface between atomic force microscope tip and the ZnO NW, as assumed in our original mechanism for the nanogenerators.
机译：我们已经应用了微扰理论来计算尖端处的横向力推动的纳米线（NW）中的压电势分布。在一阶近似下给出的解析解所产生的结果与使用有限元方法得出的完整数值计算结果的误差在6％以内。计算表明，除非非常靠近两端，否则NW中的压电势几乎不取决于沿NW的z坐标，这意味着NW可以近似地用作“平行电镀电容器”。这与为纳米压电技术建立的模型完全一致，在该模型中，纳米线上的电位降充当压电场效应晶体管的栅极电压。 NW表面的最大电势与NW的横向位移成正比，与其长径比的立方成反比。直径为50 nm且长度为600 nm的NW的压电电位幅值约为0.3V。该电压比热电压（约25 mV）大得多，并且足以驱动金属半导体肖特基二极管原子力显微镜尖端与ZnO NW之间的界面，正如我们对纳米发生器的原始机制所假定的那样。

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