Multiple quantum well AlGaAs nanowires

Chen C; Braidy N; Couteau C; Fradin C; Weihs G; LaPierre R

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Multiple quantum well AlGaAs nanowires

机译：多量子阱AlGaAs纳米线

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This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Microphotoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to nonsegmented NWs due to carrier confinement and sidewall passivation.

机译：这封信报道了单个多量子阱（MQW）AlGaAs纳米线（NWs）的生长，结构和发光特性。通过在GaAs（111）B衬底上的AlGaAs线的分子束外延生长期间交替改变Al和Ga的元素通量，可以获得成分调制（MQWs）。在各个NW上进行的透射电子显微镜和能量色散X射线光谱学与由沿NW轴堆叠的圆锥形段组成的配置一致。微光致发光测量和共聚焦显微镜显示，由于载流子限制和侧壁钝化，与未分段的NW相比，MQW NW的发光增强。

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来源
《Nano letters》 |2008年第2期|共5页
作者
Chen C; Braidy N; Couteau C; Fradin C; Weihs G; LaPierre R;
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正文语种 eng
中图分类特种结构材料;
关键词
VAPOR-PHASE EPITAXY; SEMICONDUCTOR NANOWIRES; GAAS NANOWIRES; GROWTH; PHOTOLUMINESCENCE; ALXGA1-XAS;

机译：汽相外延;半电子纳米线;GAAS纳米线;生长;光致发光;ALXGA1-XAS;

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专利

1. Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires [J] . M.A. Tito, B.G.M. Tavares, H. Arakaki, Superlattices and microstructures . 2016,第deca期

机译：纳米线中形成的径向多量子阱GaAs / AlGaAs异质结构
2. Multiple quantum well AlGaAs nanowires [J] . Chen C, Braidy N, Couteau C, Nano letters . 2008,第2期

机译：多量子阱AlGaAs纳米线
3. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon [J] . Cirlin G. E., Shtrom I. V., Reznik R. R., Semiconductors . 2016,第11期

机译：杂交Algaas / GaAs / Algaas纳米线与硅的分子束外延生长的量子点
4. Non-uniform tunneling transport in composite InGaAs/AlGaAs and GaAs/AlGaAs multiple quantum wells [C] . Koji Kawasaki, Kenzo Fujiwara, Naokatsu Sano Conference on Optoelectronics, Materials, and Devices for Communications Nov 12-15, 2001, Beijing, China . 2001

机译：InGaAs / AlGaAs和GaAs / AlGaAs复合多量子阱中的非均匀隧道传输
5. Far-infrared studies of electron-electron interactions in Si-doped GaAs/AlGaAs multiple quantum wells. [D] . Jiang, Zhenxin. 1997

机译：掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
6. Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light [O] . Laipan Zhu, Yu Liu, Wei Huang, 2016

机译：通过圆偏振光激发的自旋光电流研究无掺杂InGaAs / AlGaAs多量子阱中的自旋输运
7. Design and room-temperature operation of GaAs/AlGaAs multiple quantum well nanowire lasers [O] . Saxena Dhruv, Jiang Nian, Yuan Xiaoming, 2016

机译：GaAs / AlGaAs多量子阱纳米线激光器的设计和室温操作

Multiple quantum well AlGaAs nanowires

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