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Growth System, Structure, and Doping of Aluminum-Seeded Epitaxial Silicon Nanowires

机译：铝种子外延硅纳米线的生长体系，结构和掺杂

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We have examined the formation of silicon nanowires grown by self-assembly from Si substrates with thin aluminum films. Postgrowth and in situ investigations using various At deposition and annealing conditions suggest that nanowire growth takes place with a supercooled liquid droplet (i.e., the vapor-liquid-solid system), even though the growth temperatures are below the bulk AI/Si eutectic temperature. Wire morphology as a function of processing conditions is also described. It is shown that when At environmental exposure is prevented before wire growth a wide process window for wire formation can be achieved. Under optimum growth conditions, it is possible to produce excellent crystal quality nanowires with rapid growth rates, high surface densities, low diameter dispersion, and controlled tapering, Photoelectron spectroscopy measurements indicate that the use of At leads to active doping levels that depend on the growth temperature in as-grown nanowires and increase when annealed. We suggest that these structural and electronic properties will be relevant to photovoltaic and other applications, where the more common use of Au is believed to be detrimental to performance.
机译：我们已经研究了通过自组装从具有薄铝膜的Si基板上生长的硅纳米线的形成。使用各种At沉积和退火条件进行的生长后和原位研究表明，即使生长温度低于AI / Si的低共晶温度，纳米线的生长还是采用过冷的液滴（即气液固系统）进行的。还描述了作为加工条件的函数的线形态。结果表明，当在焊丝生长之前防止在环境中暴露时，可以实现宽的焊丝形成工艺窗口。在最佳生长条件下，可以生产出具有快速生长速率，高表面密度，低直径色散和受控锥形的优异晶体质量纳米线。光电子能谱测量表明，使用At会导致取决于生长的有源掺杂水平生长的纳米线的温度会升高，并且在退火时会升高。我们建议，这些结构和电子性能将与光伏和其他应用有关，其中更普遍地使用Au被认为会对性能产生不利影响。

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