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首页> 外文期刊>Nano letters >In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction
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In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction

机译：通过点接触反应原位控制纳米异质结构NiSi / Si / NiSi中具有大应变的原子级Si层

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Nanoheterostructures of NiSi/Si/NiSi in which the length of the Si region can be controlled down to 2 nm have been produced using in situ point contact reaction between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The Si region was found to be highly strained (more than 12%). The strain increases with the decreasing Si layer thickness and can be controlled by varying the heating temperature. It was observed that the Si nanowire is transformed into a bamboo-type grain of single-crystal NiSi from both ends following the path with low-activation energy. We propose the reaction is assisted by interstitial diffusion of Ni atoms within the Si nanowire and is limited by the rate of dissolution of Ni into Si at the point contact interface. The rate of incorporation of Ni atoms to support the growth of NiSi has been measured to be 7 x 10(-4) s per Ni atom. The nanoscale epitaxial growth rate of single-crystal NiSi has been measured using high-resolution lattice-imaging videos. On the basis of the rate, we can control the consumption of Si and, in turn, the dimensions of the nanoheterostructure down to less than 2 nm, thereby far exceeding the limit of conventional patterning process. The controlled huge strain in the controlled atomic scale Si region, potential gate of Si nanowire-based transistors, is expected to significantly impact the performance of electronic devices.
机译：利用超高真空透射电子显微镜中的Si和Ni纳米线之间的原位点接触反应，已经生产了其中Si区域的长度可以控制到2 nm的NiSi / Si / NiSi纳米异质结构。发现Si区域高度应变（超过12％）。应变随着硅层厚度的减小而增加，并且可以通过改变加热温度来控制。观察到，Si纳米线从两端沿低活化能的路径转变为竹状单晶NiSi晶粒。我们提出该反应是通过镍原子在硅纳米线内的间隙扩散来辅助的，并且受镍在点接触界面处溶解到硅中的速率的限制。据测量，支持NiSi生长的Ni原子掺入速率为每个Ni原子7 x 10（-4）s。已经使用高分辨率晶格成像视频测量了单晶NiSi的纳米级外延生长速率。基于该速率，我们可以控制Si的消耗，进而可以将纳米异质结构的尺寸控制在2 nm以下，从而远远超出了常规构图工艺的极限。预期在可控的原子尺度Si区域（基于Si纳米线的晶体管的潜在栅极）中的可控巨大应变将显着影响电子设备的性能。

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