首页> 外文期刊>Nano letters >Electron-phonon coupling and localization of excitons in single silicon nanocrystals
【24h】

Electron-phonon coupling and localization of excitons in single silicon nanocrystals

机译:单硅纳米晶体中电子与声子的耦合和激子的局域化

获取原文
获取原文并翻译 | 示例
           

摘要

We report a detailed photoluminescence (PL) study on single silicon nanocrystals produced by laser pyrolysis. The PL spectra reveal nearly homogeneously broadened zero-phonon lines coupled to Si-O-Si phonon transitions in the SiO2 shell. A systematic investigation of electron-phonon coupling is reported on-the basis of single nanocrystals. The stepwise localization of electron and hole at the Si-SiO2 interface for nanocrystals smaller than d approximate to 2.7 nm is driven by electron-phonon coupling. From the localization energies the effective Bohr radii of the (localized) electron and hole are estimated to be in the range of 1-2 bond lengths of Si-O and Si-Si.
机译:我们报告了由激光热解产生的单硅纳米晶体的详细的光致发光(PL)研究。 PL谱揭示了与SiO2壳中的Si-O-Si声子跃迁耦合的几乎均匀加宽的零声子线。在单纳米晶体的基础上,对电子-声子耦合进行了系统研究。对于小于d的大约2.7 nm的纳米晶体,电子和空穴在Si-SiO2界面上的逐步定位是由电子-声子耦合驱动的。从定位能估计(局部)电子和空穴的有效玻尔半径在Si-O和Si-Si的1-2个键长的范围内。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号