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All-Electric Spin Control in Interference Single Electron Transistors

机译:干扰单电子晶体管中的全电自旋控制

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Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment(1) has been repeated with electrons in vacuum(2,3) up to the more massive C-60 molecules.(4) Mesoscopic rings threaded by a magnetic flux provide the solid-state analogues.(5,6) Intramolecular interference has been recently discussed in molecular junctions.(7-11) Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics(12-14) and spin-qubit applications.(15-19) The device consists of an interference single electron transistor,(10,11) where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange interaction on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved.
机译:单粒子干涉是量子力学的核心。原型双缝实验(1)已在真空中的电子(2,3)重复进行,直至达到更大的C-60分子。(4)由磁通量穿过的介观环提供了固态类似物。(5 ,6)最近在分子连接中讨论了分子内干扰。(7-11)在这里,我们建议利用干扰来实现量子点中单个电子自旋的全电控制,这是自旋电子学的一个非常理想的特性(12-14) (15-19)该设备由一个干扰单电子晶体管(10,11)组成,其中轨道退化电子状态之间的破坏性干扰会在特定偏置电压下产生电流阻塞。我们表明,在存在平行极化铁磁引线的情况下,系统上的干扰与交换相互作用之间的相互作用会产生有效的能量重新归一化,从而对多数和少数自旋产生不同的阻挡偏置。因此,通过调整偏置电压,可以完全控制俘获电子的自旋。

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