Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Robinson JA; Wetherington M; Tedesco JL; Campbell PM; Weng X; Stitt J; Fanton MA; Frantz E; Snyder D; VanMil BL; Jernigan GG; Myers-Ward RL; Eddy CR; Gaskill DK

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Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

机译：外延石墨烯中拉曼光谱签名与载流子的相关性：在晶圆级实现高迁移率的指南

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We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(000 (1) over bar) and show that carrier mobility depends strongly on the graphene layer stacking.

机译：我们报道了在碳化硅（SiC）上生长的外延石墨烯（EG）的载流子迁移率和拉曼形貌之间的直接关系。我们表明，SiC（0001）上材料的霍尔迁移率高度依赖于厚度和单层应变均匀性。此外，我们在SiC（000（1）以上，在条形上）上实现了高迁移率外延石墨烯（室温下为18100 cm（2）/（V s）），并表明载流子迁移率强烈依赖于石墨烯层的堆叠。

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《Nano letters》 |2009年第8期|共4页
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Robinson JA; Wetherington M; Tedesco JL; Campbell PM; Weng X; Stitt J; Fanton MA; Frantz E; Snyder D; VanMil BL; Jernigan GG; Myers-Ward RL; Eddy CR; Gaskill DK;
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1. Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale [J] . Robinson JA, Wetherington M, Tedesco JL, Nano letters . 2009,第8期

机译：外延石墨烯中拉曼光谱签名与载流子的相关性：在晶圆级实现高迁移率的指南
2. Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC [J] . M. Winters, E.B. Thorsteinsson, E.OE. Sveinbjoernsson, Materials science forum . 2014,第pta2期

机译：在4H-SiC上生长和H嵌入的外延石墨烯中，载流子迁移率随温度的变化
3. Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene [J] . Christos Dimitrakopoulos, Alfred Grill, Timothy J. McArdle, Applied Physics Letters . 2011,第22期

机译：SiC晶片错切角对外延生长石墨烯的形貌和霍尔迁移率的影响
4. The mobility vs. carrier density trend in wafer-scale epitaxial graphene on SiC, and how it can be defeated [C] . C. Dimitrakopoulos, T. J. McArdle, D. Farmer AIChE Annual Meeting . 2014

机译：SiC上晶圆级外延石墨烯的迁移率与载波密度趋势，以及如何被击败
5. Detection of chemicals and biomaterials using aluminium gallium nitride/gallium nitride high electron mobility transistors and hydrogen detection by epitaxial graphene [D] . Chu, Byung Hwan 2011

机译：使用氮化铝镓/氮化镓高电子迁移率晶体管检测化学物质和生物材料，并通过外延石墨烯检测氢
6. Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale single-domain graphene [O] . Sang-Hoon Bae, Xiaodong Zhou, Seyoung Kim, 2017

机译：在外延石墨烯中揭示载流子传输机制以形成晶圆级单畴石墨烯
7. Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale [O] . Robinson, Joshua A., Wetherington, Maxwell, Tedesco, Joseph L., 2009

机译：外延中拉曼光谱特征与载流子迁移的关联性石墨烯：在晶圆尺度上实现高流动性的指南

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

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