Size limits on doping phosphorus into silicon nanocrystals

Chan TL; Tiago ML; Kaxiras E; Cheikowsky JR

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Size limits on doping phosphorus into silicon nanocrystals

机译：将磷掺杂到硅纳米晶体中的尺寸限制

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We studied the electronic properties of phosphorus-doped silicon nanocrystals using the real-space first-principles pseudopotential method. We simulated nanocrystals with a diameter of up to 6 nm and made a direct comparison with experimental measurement for the first time for these systems. Our calculated size dependence of hyperfine splitting was in excellent agreement with experimental data. We also found a critical nanocrystal size below which we predicted that the dopant will be ejected to the surface.

机译：我们使用实空间第一原理伪电势方法研究了磷掺杂的硅纳米晶体的电子性能。我们模拟了直径最大为6 nm的纳米晶体，并首次与这些系统的实验测量结果进行了直接比较。我们计算的超细分裂尺寸依赖性与实验数据非常吻合。我们还发现了一个临界的纳米晶体尺寸，在该尺寸以下，我们可以预测掺杂剂将被喷射到表面。

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《Nano letters》 |2008年第2期|共5页
作者
Chan TL; Tiago ML; Kaxiras E; Cheikowsky JR;
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正文语种 eng
中图分类特种结构材料;
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QUANTUM DOTS; 1ST-PRINCIPLES CALCULATIONS; HYDROGENIC IMPURITY; PHOTOLUMINESCENCE; CRYSTALLITES; ENERGIES; STATES;

机译：量子点;第一性原理计算;氢杂质;光致发光;晶体;能量;状态;

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1. 硅与二氧化硅界面的有限尺寸效应对纳米晶体管栅漏电流的影响 [J] . 李海霞, 季爱明, 朱灿焰, 东南大学学报（英文版） . 2019,第003期
2. Size limits on doping phosphorus into silicon nanocrystals [J] . Chan TL, Tiago ML, Kaxiras E, Nano letters . 2008,第2期

机译：将磷掺杂到硅纳米晶体中的尺寸限制
3. Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System [J] . Yoshifumi Nakamine, Naoki Inaba, Tetsuo Kodera, Japanese journal of applied physics.Part 1.Regular papers & short notes . 2011,第2期

机译：通过超高频等离子体沉积系统制备的硅纳米晶的尺寸减小和磷掺杂
4. Size limit on the phosphorous doped silicon nanocrystals for dopant activation [J] . P. Yang, R.M. Gwilliam, I.F. Crowe, Nuclear Instruments & Methods in Physics Research . 2013,第jula15期

机译：磷掺杂的硅纳米晶体对掺杂剂活化的尺寸限制
5. Electronic states and optical gap of phosphorus-doped silicon nanocrystals embedded in a silica host matrix [C] . Anton A. Konakov, Vladimir A. Belyakov, Vladimir A. Burdov Internationalonference on Gettering and Defect Engineering in Semiconductor Technology . 2014

机译：嵌入二氧化硅宿主基质中的磷掺杂硅纳米晶体的电子状态和光学间隙
6. Fabrication and characterization of rare earth-doped silicon nanocrystals and rare earth-doped silicon dioxide nanostructures [D] . St. John, John Vincent 1998

机译：稀土掺杂硅纳米晶和稀土掺杂二氧化硅纳米结构的制备与表征
7. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：由磷和硼掺杂的富硅氧化物和氮氧化物生长的硅纳米晶体中没有自由载流子
8. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：从磷和硼掺杂的富含氧化硅和氮氧化物生长的硅纳米晶体中没有自由载体

Size limits on doping phosphorus into silicon nanocrystals

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