Current versus Temperature-Induced Switching in a Single-Molecule Tunnel Junction: 1,5 Cyclooctadiene on Si(001)

Nacci C; Folsch S; Zenlchowski K; Dokic J; Klamroth T; Saalfrank P

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Current versus Temperature-Induced Switching in a Single-Molecule Tunnel Junction: 1,5 Cyclooctadiene on Si(001)

机译：单分子隧道结中的电流与温度诱导的开关：Si（001）上的1,5环辛二烯

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The biconformational switching of single cyclooctadiene molecules chemisorbed on a Si(001) surface was explored by quantum chemical and quantum dynamical calculations and low-temperature scanning tunneling microscopy experiments. The calculations rationalize the experimentally observed switching driven by inelastic electron tunneling (IET) at 5 K. At higher temperatures, they predict a controllable crossover behavior between IET-driven and thermally activated switching, which is fully confirmed by experiment.

机译：通过量子化学和量子动力学计算以及低温扫描隧道显微镜实验探索了化学吸附在Si（001）表面上的单个环辛二烯分子的双构象转换。这些计算合理化了在5 K下由非弹性电子隧穿（IET）驱动的实验观察到的开关。在更高的温度下，他们预测IET驱动的开关和热激活开关之间的可控交叉行为，这一点已由实验完全证实。

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《Nano letters》 |2009年第8期|共5页
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Nacci C; Folsch S; Zenlchowski K; Dokic J; Klamroth T; Saalfrank P;
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1. Current versus Temperature-Induced Switching in a Single-Molecule Tunnel Junction: 1,5 Cyclooctadiene on Si(001) [J] . Nacci C, Folsch S, Zenlchowski K, Nano letters . 2009,第8期

机译：单分子隧道结中的电流与温度诱导的开关：Si（001）上的1,5环辛二烯
2. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions [J] . Zhang Zheng-Zhong, Shen Rui, Sheng Li, 中国物理：英文版 . 2011,第004期

机译：单分子磁隧道结中的全电控自旋电流切换
3. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions [J] . 张正中, 沈瑞, 盛利, 中国物理：英文版 . 2011,第004期

机译：单分子磁隧道结中的全电控自旋电流切换
4. Reduced Switching Current Density and Improved Interface Quality using Oxynitride Tunnel Barrier in Magnetic Tunnel Junctions for MRAM Application [C] . Mohamad G. Moinuddin, Srikant Srinivasan, Satinder K. Sharma Device Research Conference . 2021

机译：用于MRAM应用的磁隧道结中的氧氮化物隧道屏障降低开关电流密度和改进的界面质量
5. Atomic-level characterization of iron(001)/magnesium oxide(001)/iron(001) tunneling magnetoresistance structures and spin-polarized scanning tunneling microscopy. [D] . Lee, Jookyung. 2010

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6. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance [O] . Mengxing Wang, Wenlong Cai, Kaihua Cao, -1

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7. Controllable spin switching in a single-molecule magnetic tunneling junction [O] . Zhengzhong Zhang, Ya Wang, Haiou Wang, 2020

机译：单分子磁隧道交界处的可控旋转切换

Current versus Temperature-Induced Switching in a Single-Molecule Tunnel Junction: 1,5 Cyclooctadiene on Si(001)

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