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首页> 外文期刊>Nanotechnology >Formation of manganese silicDEe nanowires on Si(111) surfaces by the reactive epitaxy method
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Formation of manganese silicDEe nanowires on Si(111) surfaces by the reactive epitaxy method

机译：反应外延法在Si（111）表面形成锰硅DEe纳米线

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摘要

Manganese silicDEe nanowires (NWs) with a large length/wDEth ratio have been predominantly formed on Si(111)-7 x 7 surfaces with the reactive epitaxy method by a delicate control of growth parameters. The supply of free Si atoms per unit time plays a crucial role in the formation of the NWs. High growth temperature and low Mn deposition rate are favorable for the growth of long NWs with a large length/wDEth ratio and the formation of islands with other shapes can be greatly restrained under these conditions. The formation of NWs is driven by the minimization of the strain energy caused by the lattice mismatch between the silicDEe and substrate. Scanning tunneling spectroscopy measurements show that the NWs exhibit a semiconducting character with a band gap of similar to 0.8 eV, which is consistent with that of bulk MnSi1.7.
机译：通过精细控制生长参数，采用反应性外延方法，主要在Si（111）-7 x 7表面上形成了长径比宽锰酸锰锰纳米线（NWs）。单位时间内游离硅原子的供应在NW的形成中起关键作用。高生长温度和低Mn沉积速率有利于长长宽比宽的长NW的生长，在这些条件下可以大大抑制其他形状的岛的形成。 NW的形成是由由sileDEe和衬底之间的晶格失配引起的应变能最小化驱动的。扫描隧道光谱法测量表明，NW表现出半导体特性，其带隙接近0.8 eV，这与块状MnSi1.7一致。

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