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Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate

机译：硅衬底上干法刻蚀的硅纳米柱的纵横比相关超低反射和发光

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摘要

The Si nanopillars with high aspect ratio were fabricated by dry-etching the thin SiO2-covered Si substrate with a rapidly self-assembled Ni nanodot patterned mask. Aspect-ratio-dependent ultra-low reflection and anomalous luminescence of Si nanopillars are analyzed for applications in all-Si based lighting and energy transferring systems. The Si nanopillars induce an ultra-low reflectance and refractive index of 0.88% and 1.12, respectively, at 435 nm due to the air/Si mixed structure and highly roughened surface. The reflectance can be < 10% with a corresponding refractive index of < 1.80 between 190 and 670 nm. Lengthening the Si nanopillars from 150 +/- 15 to 230 +/- 20 nm further results in a decreasing reflectance, corresponding to a reduction in refractive index by Delta n = 18% in the visible and near-infrared wavelength region. After dry-etching an Si wafer into Si nanopillars, the weak blue-green luminescence with double consecutive peaks at 418-451 nm is attributed to the oxygen defect (O2-)-induced radiation, which reveals less relevance with the ultra-low-reflective Si nanopillar surface.
机译：通过使用快速自组装的Ni纳米点图案化掩模对包含SiO2的薄硅基板进行干法刻蚀，可以制造出具有高深宽比的Si纳米柱。分析了基于纵横比的超低反射率和Si纳米柱的异常发光在全硅基照明和能量传输系统中的应用。由于空气/硅的混合结构和高度粗糙的表面，Si纳米柱在435 nm处的超低反射率和折射率分别为0.88％和1.12。反射率可以<10％，相应的折射率在190至670 nm之间<1.80。将Si纳米柱从150 +/- 15纳米延长至230 +/- 20纳米进一步导致反射率降低，这对应于在可见光和近红外波长区域的折射率降低Δn/ n = 18％。将硅晶片干法刻蚀成硅纳米柱后，蓝绿色的弱发光在418-451 nm处有两个连续的峰值，这归因于氧缺陷（O2-）诱导的辐射，与超低辐射的相关性较小。反射硅纳米柱表面。

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