• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires
【24h】

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

机译：在单个InN纳米线上通过微拉曼光谱研究的禁区纵向光学声子模式的增强光散射

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.
机译：在文献中，关于InN拉曼光谱在未屏蔽的纵向光学（LO）声子的能量区域中出现强散射峰的现象的解释存在争议，尽管预计由声子-等离子体激元相互作用引起的位移在这种材料中观察到高电导。关于光散射的大多数测量是在InN纳米线（NW）的集合体上进行的。但是，研究单个纳米线的行为很重要，在这里我们报告单个纳米线上的微拉曼测量。当将入射光的偏振方向从平行于垂直更改为垂直于导线时，对于横向光学（TO）和E2声子散射模式，可以观察到拉曼散射的预期减少，而在单独的模式下，可以观察到强烈的对称性禁止的LO模式。激光偏振方向。还研究了掺Mg和Si的单晶InN纳米线。镁掺杂导致拉曼峰的锐化，而硅掺杂导致LO峰的不对称展宽。可以基于高电子浓度对表面累积层和相关内部电场的强大贡献的影响来解释结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号