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The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct

机译：使用二甲基锌加合物沉积的垂直排列的ZnO纳米线的光学特性

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The optical properties of zinc oxide nanowires are critically influenced by the growth process. Herein, we describe a metal-organic chemical vapour deposition (MOCVD) process for the growth of ZnO nanowires with improved optical properties. A tetrahydrofuran adduct is used to control the reactivity of dimethylzinc to enable this. Vertically aligned zinc oxide nanowires have been grown on Si(111) substrates by liquid injection MOCVD, using a solution of [Me2Zn( tetrahydrofuran)] in the presence of oxygen. The ZnO morphology becomes nanowire-like in a narrow temperature range centred about 500 degrees C. Above and below this temperature range, the ZnO is deposited in the form of polycrystalline films. The ZnO nanowires grow from a polycrystalline nucleation layer, with the (0002) c-axis parallel to the Si < 111 > substrate orientation. High-resolution electron microscopy reveals a highly crystalline nanowire microstructure. Resonance enhanced ultraviolet Raman spectroscopy shows that the ratio of first- and second-order longitudinal optic modes is commensurate with electron-phonon coupling effects observed previously in ZnO nanostructures. Photoluminescence exhibits intense near band-edge emission with a full width at half-maximum of 110 meV at room temperature and shows negligible defect-related visible emission.
机译：氧化锌纳米线的光学特性受到生长过程的严重影响。在这里，我们描述了一种金属有机化学气相沉积（MOCVD）工艺，用于生长具有改善的光学性能的ZnO纳米线。使用四氢呋喃加合物来控制二甲基锌的反应活性。垂直排列的氧化锌纳米线已经通过液相注入MOCVD在[Me2Zn（四氢呋喃）]溶液中在氧气存在下生长在Si（111）衬底上。 ZnO的形态在以约500℃为中心的狭窄温度范围内变为纳米线状。在该温度范围的上下，ZnO以多晶膜的形式沉积。 ZnO纳米线从多晶成核层生长，其（0002）c轴平行于Si <111>衬底取向。高分辨率电子显微镜揭示了高度结晶的纳米线微观结构。共振增强紫外拉曼光谱表明，一阶和二阶纵向光学模式的比率与先前在ZnO纳米结构中观察到的电子-声子耦合效应相当。光致发光表现出强烈的近带边发射，在室温下半峰全宽为110 meV，并且与缺陷相关的可见发射可忽略不计。

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