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CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method

机译：两步物理气相传输法制备CdS / CdSe横向异质结构纳米带

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摘要

The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both ±(0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side ±(0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.
机译：通过两步物理气相传输法合成了具有中心CdSe区域和横向CdS结构的二维异质结构纳米带。发现在CdSe区域的两个±（0001）侧上的横向CdS结构之间的大的生长速率差异。根据CdSe侧面±（0001）表面的极性性质讨论了生长各向异性。高分辨率透射电子显微镜显示CdSe中央区域覆盖着不均匀的CdS层/岛。从微光致发光测量，观察到随着侧向CdS生长温度的升高，中心CdSe区域的发射能量发生系统蓝移。该结果表明，随着横向CdS生长温度的升高，CdSe区域中与CdS的混合速率增加。在传统的CdSSe三元纳米结构中，形态和发射波长是相关参数。但是，在CdS / CdSe横向异质结构纳米带中，形态和发射波长是可独立控制的。这种结构对于可见光电子设备中的应用很有吸引力。

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