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Electrically configurable electroforming and bipolar resistive switching in Pt/TiO_2/Pt structures

机译：Pt / TiO_2 / Pt结构中的可电配置电铸和双极电阻切换

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This study examined the effects of electrical forming methods on the bipolar resistance switching (BRS) behavior in Pt/TiO_2/Pt sandwich structures. The BRS is confined to a region near the ruptured end of conducting nanofilaments, which are composed of a Ti_nO_(2n ? 1) Magnéli phase formed by electroforming. The intermediate phase with an oxygen vacancy concentration between the insulating TiO_2 and the residual conducting filament that formed at the interface region was considered to be the switching layer (SL). The change in filament shape caused by a variation in the compliance current during filament formation resulted in a different filament rupture location and SL configuration. Precise control of the filament formation and rupture process resulted in SLs connected in an anti-parallel configuration. It was possible to reconfigure the SLs in the same fashion without any restraints, which allowed an unlimited memristive operation to be achieved. This paper presents a new technique in voltage sweep mode that applies a compliance current as a tool to achieve a memristor with unlimited operation.
机译：这项研究检查了电形成方法对Pt / TiO_2 / Pt夹层结构中双极电阻切换（BRS）行为的影响。 BRS被限制在导电纳米丝断裂端附近的区域，导电纳米丝由通过电铸形成的Ti_nO_（2n？1）Magnéli相组成。在绝缘TiO 2和在界面区域处形成的残留导电丝之间具有氧空位浓度的中间相被认为是开关层（SL）。由细丝形成期间顺从电流的变化引起的细丝形状的改变导致不同的细丝破裂位置和SL构型。细丝形成和断裂过程的精确控制导致SL以反平行配置连接。可以以相同的方式重新配置SL，而没有任何限制，从而可以实现无限的忆阻操作。本文介绍了一种电压扫描模式的新技术，该技术将顺应性电流用作实现无限操作忆阻器的工具。

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