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首页> 外文期刊>Nanotechnology >Titanium–tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operation in non-volatile memory
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Titanium–tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operation in non-volatile memory

机译：钛-钨纳米晶体嵌入SiO2 / Al2O3栅极电介质堆栈中，可在非易失性存储器中实现低压运行

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摘要

Titanium–tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti_(0.46)W_(0.54) NCs were embedded in the gate dielectric stack of SiO_2/Al_2O_3. A metal–oxide–semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V_(FB)) shift under a dual-directional sweeping gate voltage of ? 10 to 10 V. A 1.1 V V_(FB) shift under a low dual-directional sweeping gate voltage of ? 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10~4 s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.
机译：钛钨纳米晶体（NCs）是通过自组装快速热退火（RTA）工艺制造的。隔离良好的Ti_（0.46）W_（0.54）NCs嵌入SiO_2 / Al_2O_3的栅介电层中。制作了金属氧化物半导体（MOS）电容器以研究其在非易失性存储器（NVM）器件中的应用。它展示了一个大的6.2 V的存储器窗口，该存储器窗口在双向扫描栅极电压为？ 10至10V。在双向双向低扫栅电压为？还观察到4至4V。在室温下经过10〜4 s后，通过0.5 V的存储窗口证明了该MOS电容器的保持特性。耐力特性通过程序/擦除循环测试证明。

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