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首页> 外文期刊>Nanotechnology >An ordered Si nanowire with NiSi_2 tip arrays as excellent field emitters
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An ordered Si nanowire with NiSi_2 tip arrays as excellent field emitters

机译：具有NiSi_2尖端阵列的有序Si纳米线可作为出色的场发射器

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A method was developed to grow ordered silicon nanowire with NiSi _2 tip arrays by reacting nickel thin films on silica-coated ordered Si nanowire (NW) arrays. The coating of thin silica shell on Si NW arrays has the effect of limiting the diffusion of nickel during the silicidation process to achieve the single crystalline NiSi_2 NWs. In the meantime, it relieves the distortion of the NWs caused by the strain associated with formation of NiSi_2 to maintain the straightness of the nanowire and the ordering of the arrays. Other nickel silicide phases such as Ni _2Si and NiSi were obtained if the silicidation processes were conducted on the ordered Si NWs without a thin silica shell. Excellent field emission properties were found for NiSi_2/Si NW arrays with a turn on field of 0.82 V μm~(-1) and a threshold field of 1.39 V μm ~(-1). The field enhancement factor was calculated to be about 2440. The stability test showed a fluctuation of about 7% with an applied field of 2.6 V μm-1 for a period of 24 h. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the single crystalline NiSi_2/Si heterostructure field emitters. In contrast to other growth methods, the present growth of ordered nickel silicide/Si NWs on silicon is compatible with silicon nanoelectronics device processes, and also provides a facile route to grow other well-aligned metal silicide NW arrays. The advantages will facilitate its applications as field emission devices.
机译：通过使镍薄膜在二氧化硅涂覆的有序Si纳米线（NW）阵列上反应，开发了一种通过NiSi _2尖端阵列生长有序硅纳米线的方法。 Si NW阵列上的二氧化硅薄壳涂层的作用是限制硅化过程中镍的扩散，以实现单晶NiSi_2 NW。同时，它减轻了由与形成NiSi_2有关的应变所引起的NW的畸变，从而保持了纳米线的平直度和阵列的有序性。如果在没有薄硅壳的情况下对有序的硅纳米线进行硅化处理，则会获得其他硅化镍相，例如Ni _2Si和NiSi。对于NiSi_2 / Si NW阵列，发现其场发射特性极好，其开启场为0.82 Vμm〜（-1），阈值场为1.39 Vμm〜（-1）。计算出的场增强因子约为2440。稳定性测试显示，在2.6 Vμm-1的电场作用下，持续24 h的波动约为7％。优异的场发射特性归因于单晶NiSi_2 / Si异质结构场致发射体的排列整齐且高度有序。与其他生长方法相反，目前在硅上有序硅化镍/ Si NW的生长与硅纳米电子器件工艺兼容，并且还提供了生长其他排列良好的金属硅化物NW阵列的便捷途径。优点将促进其作为场发射器件的应用。

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