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首页> 外文期刊>Nanotechnology >Focused-ion-beam-inflicted surface amorphization and gallium implantation-new insights and removal by focused-electron-beam-induced etching
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Focused-ion-beam-inflicted surface amorphization and gallium implantation-new insights and removal by focused-electron-beam-induced etching

机译：聚焦离子束引起的表面非晶化和镓注入-聚焦电子束诱导蚀刻的新见解和去除

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Recently focused-electron-beam-induced etching of silicon using molecular chlorine (Cl_2-FEBIE) has been developed as a reliable and reproducible process capable of damage-free, maskless and resistless removal of silicon. As any electron-beam-induced processing is considered non-destructive and implantation-free due to the absence of ion bombardment this approach is also a potential method for removing focused-ion-beam (FIB)-inflicted crystal damage and ion implantation. We show that Cl_2-FEBIE is capable of removing FIB-induced amorphization and gallium ion implantation after processing of surfaces with a focused ion beam. TEM analysis proves that the method Cl_2-FEBIE is non-destructive and therefore retains crystallinity. It is shown that Cl_2-FEBIE of amorphous silicon when compared to crystalline silicon can be up to 25 times faster, depending on the degree of amorphization. Also, using this method it has become possible for the first time to directly investigate damage caused by FIB exposure in a top-down view utilizing a localized chemical reaction, i.e.without the need for TEM sample preparation. We show that gallium fluences above 4 × 10 ~(15)cm~(-2) result in altered material resulting from FIB-induced processes down to a depth of ～ 250nm. With increasing gallium fluences, due to a significant gallium concentration close beneath the surface, removal of the topmost layer by Cl_2-FEBIE becomes difficult, indicating that gallium serves as an etch stop for Cl_2-FEBIE.
机译：最近，已经开发出使用分子氯（Cl_2-FEBIE）的聚焦电子束诱导的硅蚀刻技术，该技术是一种可靠且可重现的工艺，能够无损伤，无掩膜和无抗蚀剂地去除硅。由于没有离子轰击，任何电子束诱导的处理都被认为是无损且无注入的，因此该方法也是消除聚焦离子束（FIB）造成的晶体损伤和离子注入的潜在方法。我们表明，Cl_2-FEBIE能够在聚焦离子束表面处理后去除FIB诱导的非晶化和镓离子注入。 TEM分析证明方法Cl_2-FEBIE是无损的，因此保留了结晶度。结果表明，与非晶硅相比，非晶硅的Cl_2-FEBIE可以快25倍，具体取决于非晶化程度。同样，使用这种方法，首次有可能利用局部化学反应以自上而下的方式直接调查由FIB暴露引起的损害，即无需TEM样品制备。我们表明，镓注量超过4×10〜（15）cm〜（-2）会导致由FIB诱导的过程产生的材料改变，其深度降至约250nm。随着镓注量的增加，由于接近表面之下的大量镓浓度，Cl_2-FEBIE去除最上层变得困难，这表明镓充当了Cl_2-FEBIE的蚀刻停止层。

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